Presentations

1. "Modeling of Interface Atomic Arrangement for Analysis of Solid Phase Epitaxy and Si-on-Insulator Structure";
   T. Saito and I. Ohdomari, U.S.-Japan Seminar on Solid Phase Epitaxy and Interface Kinetics (Oiso, Japan, June 20-24, 1983).

2. "Analysis of the Si-on-Insulator Structure by Modeling of the Interface Atomic Arrangement";
   T. Saito, Y. Yamakoshi and I. Ohdomari, Materials Research Society Symposium on Thin Films and Interfaces (Boston, Massachusetts, 1983).

3. "Submicron Processing of III-V Semiconductors by Focused Ion Beam Technology";
   T. Hiramoto, T. Odagiri, P. Oldiges, T. Saito and T. Ikoma, 13th Int. Symp. GaAs and Related Compounds (Las Vegas, Nevada, 1986).

4. "Direct Experimental Estimation of Interface Dipole Effect of GaAs/AlAs Heterojunction Band Offset by X-ray Photoelectron Spectroscopy";
   K. Hirakawa, Y. Hashimoto, T. Saito and T. Ikoma, 16th Int. Symp. GaAs and Related Compounds (Karuizawa, Japan, 1989).

5. "Relation between Band Gap Shrinkage and Overlap of Interface States in Polar (GaAs)n/(Ge2)n [001] Superlattice";
   T. Saito and T. Ikoma, 5th Int. Conf. on Superlattices and Microstructures (Berlin, GDR, 1990).

6. "Impurity-Related Bands in GaAs Doped with Ge, Zn, and Se Monolayers";
   T. Saito and T. Ikoma, 5th Int. Conf. on Modulated Semiconductor Structures (Nara, Japan, July 8-12, 1991).

7. "Self-Consistent Tight-Binding Calculations of Band Discontinuity in GaAs/AlAs Superlattices Controlled by Group-IV-Element Insertion Layers",
   T. Saito and T. Ikoma, 6th Int. Conf. on Superlattices, Microstructures and Microdevices, We-P-52 (Xi'an, China, August 4-7, 1992).

8. "Roles of ultrathin Si layer inserted at GaAs/AlAs heterointerface";
   Y. Hashimoto, T. Saito, K. Hirakawa, and T. Ikoma, 19th Int. Symp. GaAs and Related Compounds (Karuizawa, Japan, 1992).

9. "Artificial Control of Band Discontinuity at GaAs/AlAs Heterointerface";
   Y. Hashimoto, T. Saito, and T. Ikoma, 35th Electronic Materials Conference (Santa Barbara, California, 1993).

10. "Band Discontinuity and Effects of Si-Insertion Layer at (311)A GaAs/AlAs Interface",
    T. Saito, Y. Hashimoto, and T. Ikoma, 6th Int. Conf. on Modulated Semiconductor Structures (Garmisch-Partenkirchen, Germany, 1993).

11. "Band Discontinuity in GaAs/AlAs Superlattices with InAs Strained Insertion-Layers";
    T. Saito, Y. Hashimoto, and T. Ikoma, 7th Int. Conf. on Superlattices, Microstructures, and Microdevices, P1.100 (Banff, Canada, August 22-26, 1994).

12. "Artificial control of heterojunction band discontinuities by two delta dopings";
    Y. Hashimoto, N. Sakamoto, K. Agawa, T. Saito, and T. Ikoma, 21st Int. Symp. on Compound Semiconductors (San Diego, USA, 1994).

13. "Control of GaAs/AlAs Heterojunction Band Offsets";
    Y. Hashimoto, T. Saito, and T. Ikoma, 1st Magneto-Electronics International Symposium (Nagano, Japan, 1994).

14. "Effects of ZnSe and P Insertion Layers on Band Offsets at (100) GaAs/AlAs Interfaces";
    T. Saito and T. Ikoma, 3rd Int. Symp. on Atomically Controlled Surfaces and Interfaces (Raleigh, North Carolina, 1995).

15. "Electronic structure of (311)-InAs monolayers in GaAs";
    T. Saito, 9th Int. Conf. on Superlattices, Microstructures, and Microdevices, TuP-25 (Liege, Belgium, July 14-19, 1996).

16. "Strain distribution and electronic structure of InAs quantum dots on GaAs: Atomic scale calculations";
    T. Saito, J. N. Schulman, and Y. Arakawa, 10th Int. Conf. on Superlattices, Microstructures, and Microdevices (Lincoln, Nebraska, July 8-11, 1997).

17. "Atomic Scale Calculations for Strain Distribution and Electronic Structure of InAs Pyramidal Quantum Dots on (100) GaAs";
    T. Saito, J. N. Schulman, and Y. Arakawa, 24th Int. Symp. on Compound Semiconductors, TuF6 (San Diego, California, Sept. 8-11, 1997).

18. "Atomic Structure and Strain in InGaN Alloy Calculated Using a Valence-Force-Field Method";
    T. Saito and Y. Arakawa, 2nd Int. Symp. on Blue Laser and Light Emitting Diodes, Tu-P51 (Chiba, Japan, Sept.29-Oct.2, 1998).

19. "Strain Energy Distribution in GaN and InGaN Quantum Dots on AlN Buffer Layers: A Valence-force-field Approach";
    T. Saito and Y. Arakawa, 25th Int. Symp. on Compound Semiconductors, TuP-25 (Nara, Japan, Oct. 12-16, 1998).

20. "Atomic scale calculations for electronic structure of InGaN hexagonal quantum dots";
    T. Saito, T. Someya, and Y. Arakawa, 3rd Int. Symp. on Control of Semiconductor Interfaces, B7-1 (Karuizawa, Japan, Oct. 25-29, 1999).

21. "Theoretical calculations for atomic and electronic structures of InGaN quantum dots";
    T. Saito and Y. Arakawa, 4th Symp. on Atomic-Scale Surface and Interface Dynamics, I-14 (Tsukuba, Japan, March 2-3, 2000).

22. "Formation of InGaN Quantum Dots: MOCVD Growth and Electronic Structures";
    T. Saito, T. Someya, K. Tachibana, S. Ishida, O. Moriwaki, and Y. Arakawa, 3rd SANKEN Int. Symp. "Advanced Nanoelectronics: Devices, Materials, and Computing", P1-35 (Osaka, Japan, March 14-15, 2000).

23. "Electronic Structure of InGaN Quantum Dots in GaN: Atomic Scale Calculations";
    T. Saito and Y. Arakawa, 2000 Int. Conf. on Solid State Devices and Materials, E-2-3 (Sendai, Japan, Aug. 29-31, 2000).

24. "Quantum confined electronic states in InGaN dots embedded in GaN: Tight-binding calculation";
    T. Saito and Y. Arakawa, 27th Int. Symp. on Compound Semiconductors, WA7 (Monterey, California, October 2-5, 2000).

25. "Electronic states of GaN-based quantum dots";
    T. Saito and Y. Arakawa, 5th Symp. on Atomic-Scale Surface and Interface Dynamics, I-11 (Tokyo, Japan, March 1-2, 2001).

26. "Effects of Internal Piezoelectric Field on Electronic States of InGaN Quantum Dots Grown on GaN";
    T. Saito and Y. Arakawa, 13th Int. Conf. on Crystal Growth in Conjunction with 11th Int. Conf. on Vapor Growth and Epitaxy, 04a-SB2-18 (Kyoto, Japan, July 30 - August 4, 2001).

27. "Quantum-Confined Stark Effect in InGaN Pyramidal Dots Induced by the Piezoelectric Field";
    T. Saito and Y. Arakawa, 28th Int. Symp. on Compound Semiconductors, WeP-20 (Tokyo, Japan, October 1-4, 2001).

28. "Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures";
    T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, and Y. Arakawa, 2nd Int. Conf. on Semiconductor Quantum Dots, B-3 (Tokyo, Japan, September 30 - October 3, 2002).

29. "Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers";
    T. Kakitsuka, T. Saito, T. Nakaoka, Y. Arakawa, H. Ebe, M. Sugawara, and Y. Yoshikuni, 2nd Int. Conf. on Semiconductor Quantum Dots, M-15 (Tokyo, Japan, September 30 - October 3, 2002).

30. "Polarization field and electronic states of GaN pyramidal quantum dots in AlN";
    T. Saito and Y. Arakawa, 2nd Int. Conf. on Semiconductor Quantum Dots, M-16 (Tokyo, Japan, September 30 - October 3, 2002).

31. "Demonstration of MEMS-Controlled Electronic States in Single Quantum Dots";
    T. Nakaoka, T. Kakitsuka, T. Saito, and Y. Arakawa, 2003 Int. Conf. on Solid State Devices and Materials, E-1-5 (Tokyo, Japan, September 16-18, 2003).

32. "Atomistic Calculation of Electronic States in III-V Nitride Quantum Dots" (Invited);
    T. Saito and Y. Arakawa, 3rd Int. Conf. on Numerical Simulation of Semiconductor Optoelectronic Devices, MA1 (Tokyo, Japan, October 14-16, 2003).

33. "Strain Distribution and Electronic States in Stacked InAs/GaAs Quantum Dots";
    T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, and Y. Arakawa, Int. Symp. on Quantum Dots and Photonic Crystals 2003, P-20 (Tokyo, Japan, November 17-18, 2003).

34. "Strain Distribution and Electronic States in Stacked InAs/GaAs Quantum Dots with Dot Spacing 0-6 nm";
    T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, and Y. Arakawa, Quantum Dots 2004 Conference, THP35 (Banff, Canada, May 10-13, 2004).

35. "Characterization of g-factors in various In(Ga)As quantum dots";
    T. Nakaoka, T. Saito, H.-Z. Song, T. Usuki, and Y. Arakawa, 27th Int. Conf. on the Physics of Semiconductors, Q5.009 (Flagstaff, Arizona, July 26-30, 2004).

36. "Optical polarization control in columnar InAs/GaAs quantum dots: k•p analysis";
    T. Saito, T. Nakaoka, T. Kakitsuka, H. Ebe, M. Sugawara, and Y. Arakawa, Int. Symp. on Quantum Dots and Photonic Crystals 2005, P24 (Tokyo, Japan, March 7-8, 2005).

37. "Effect of strain on tuning of g-factor in self-assembled In(Ga)As quantum dots";
    T. Nakaoka, T. Saito, J. Tatebayashi, S. Hirose, T. Usuki, N. Yokoyama, and Y. Arakawa, Int. Symp. on Quantum Dots and Photonic Crystals 2005, P29 (Tokyo, Japan, March 7-8, 2005).

38. "Reduction of Linewidth Enhancement Factor in Self-Assembled Dots by Optimizing Optical Gain";
    T. Kakitsuka, T. Saito, and Y. Arakawa, Int. Symp. on Quantum Dots and Photonic Crystals 2005, P57 (Tokyo, Japan, March 7-8, 2005).

39. "Magnetic field dependence of exciton fine structures in InAs/GaAs quantum dots: exchange vs. Zeeman splittings";
    T. Saito, T. Nakaoka, and Y. Arakawa, 14th Int. Conf. on Modulated Semiconductor Structures, Tu-mP19 (Kobe, Japan, July 19-24, 2009).

40. "Exciton fine structures and optical polarization in InAs/GaAs quantum dots under the magnetic field";
    T. Saito, T. Nakaoka, and Y. Arakawa, Int. Symp. on Quantum Nanophotonics and Nanoelectronics, WeP-11 (Tokyo, Japan, November 18-20, 2009).

Last update : 2010/9/9