Publications
- "Annealing Behavior of Spin Density in UHV Evaporated Amorphous
Silicon" ;
T. Yonehara, T. Saito, H. Kawarada, T. Hirata, M. Kakumu and I. Ohdomari,
Physics Letters 78A, 192 (1980).
- "A Structural Model for the Interface between Amorphous and (100)
Crystalline Silicon";
T. Saito and I. Ohdomari, Philosophical Magazine B43, 673 (1981).
- "Solid Phase Epitaxial Growth of Vacuum Deposited Amorphous Silicon";
I. Ohdomari, M. Kakumu, T. Saito and T. Yonehara, Hyomen-Kagaku 2, 136
(1981). [in Japanese]
- "Electron Paramagnetic Resonance Study on the Annealing Behavior of
Vacuum Deposited Amorphous Silicon on Crystalline Silicon";
I. Ohdomari, M. Kakumu, H. Sugahara, M. Hori, T. Saito, T. Yonehara and
Y. Hajimoto, J. Appl. Phys. 52, 6617 (1981).
- "Distortion Energy Distributions in the Random Network Model of
Amorphous Silicon";
T. Saito, T. Karasawa and I. Ohdomari, J. Non-Cryst. Solids 50, 271 (1982).
- "Quantitative Analysis of Bond Rearrangement Process during Solid Phase
Epitaxy of Amorphous Silicon";
T. Saito and I. Ohdomari, Philosophical Magazine B49, 471 (1984).
- "Analysis of the Si-on-Insulator Structure by Modeling of the Interface
Atomic Arrangement";
T. Saito, Y. Yamakoshi and I. Ohdomari, Mat. Res. Soc. Symp. Proc. Vol.25
(1984) p.531.
- "Modeling of Interface Atomic Arrangement for Analysis of Solid Phase
Epitaxy and Si-on-Insulator Structure";
T. Saito and I. Ohdomari, in "Silicon-on-Insulator: Its Technology and
Applications" ed. by S. Furukawa (KTK Science Publishers, Tokyo, 1985)
p.171.
- "Rapid Thermal Annealing of Si+ Implanted GaAs in the Presence of Arsenic
Pressure by GaAs Powder";
T. Hiramoto, T. Saito and T. Ikoma, Jpn. J. Appl. Phys. 24, L193 (1985).
- "The Role of Gallium Antisite Defect in Activation and Type-Conversion in
Si Implanted GaAs";
T. Hiramoto, Y. Mochizuki, T. Saito and T. Ikoma, Jpn. J. Appl. Phys. 24, L921
(1985).
- "Submicron Processing of III-V Semiconductors by Focused Ion Beam
Technology";
T. Hiramoto, T. Odagiri, P. Oldiges, T. Saito and T. Ikoma, in Proc. of
Int. Symp. GaAs and Related Compounds, Las Vegas, Nevada, 1986,
(Inst. Phys. Conf. Ser. No.83, p.295).
- "Direct Experimental Estimation of Interface Dipole Effect of GaAs/AlAs
Heterojunction Band Offset by X-ray Photoelectron Spectroscopy";
K. Hirakawa, Y. Hashimoto, T. Saito and T. Ikoma,
in Proc. of Int. Symp. GaAs and
Related Compounds, Karuizawa, Japan, 1989, (Inst. Phys. Conf. Ser. No.106,
p.345).
- "Effect of Stacking Sequence on Valence Bands in Ga/As/Ge (001) Monolayer
Superlattices";
T. Saito and T. Ikoma, Appl. Phys. Lett. 55, 1300 (1989).
- "Relation between Band Gap Shrinkage and Overlap of Interface States in
Polar (GaAs)n/(Ge2)n [001] Superlattice";
T. Saito and T. Ikoma, Superlattices and Microstructures 9, 377 (1991).
- "Role of Interface States in Band Structures of Short-Period
(GaAs)n/(Ge2)n
[001] Superlattices under a Zero-Field Model";
T. Saito and T. Ikoma, Physical Review B 45, 1762 (1992).
- "Impurity-Related Bands in GaAs Doped with Ge, Zn, and Se Monolayers";
T. Saito and T. Ikoma, Surface Science 267, 57 (1992).
- "Self-Consistent Tight-Binding Calculations of Band Discontinuity in
GaAs/AlAs Superlattices Controlled by Group-IV-Element Insertion Layers";
T. Saito and T. Ikoma, Superlattices and Microstructures 12, 81 (1992).
- "Role of ultrathin Si layers inserted at GaAs/AlAs heterointerfaces";
Y. Hashimoto, T. Saito, K. Hirakawa, and T. Ikoma,
in Proc. of Int. Symp. GaAs and
Related Compounds, Karuizawa, Japan, 1992, (Inst. Phys. Conf. Ser., No.129,
p.259).
- "Band Discontinuity and Effects of Si-Insertion Layer at (311)A GaAs/AlAs
Interface";
T. Saito, Y. Hashimoto, and T. Ikoma, Solid-State Electronics 37,
743 (1994).
- "Determination and artificial control of heterojunction band
discontinuities";
Y. Hashimoto, T. Saito, and T. Ikoma, Oyo Buturi 63, 116 (1994).
[in Japanese]
- "Band Discontinuity in GaAs/AlAs Superlattices with InAs Strained
Insertion-Layers";
T. Saito, Y. Hashimoto, and T. Ikoma, Superlattices and Microstructures 15,
405 (1994).
- "Band Discontinuity at the (311)A GaAs/AlAs Interface and Possibility
of Its Control by Si Insertion Layers";
T. Saito, Y. Hashimoto, and T. Ikoma, Physical Review B 50, 17242 (1994).
- "Artificial control of heterojunction band discontinuities by two delta
dopings";
Y. Hashimoto, N. Sakamoto, K. Agawa, T. Saito, and T. Ikoma,
in Proc. of Int. Symp.
on Compound Semiconductors, San Diego, USA, 1994, (Inst. Phys. Conf. Ser., No.
141, p.149).
- "Effects of ZnSe and P Insertion Layers on Band Offsets at (100) GaAs/AlAs
Interfaces";
T. Saito and T. Ikoma, Applied Surface Science 107, 222 (1996).
- "Possibility of Band-Discontinuity Control at (100) GaAs/AlAs Interfaces
by ZnSe Insertion Layers";
T. Saito, Transactions of the Materials Research Society of Japan, Vol. 20,
p. 739 (1996).
- "Band Discontinuities at the (100) GaAs/AlAs Interfaces with In-
and P-Insertion Layers: Effects of Isoelectronic Impurity Layers";
T. Saito, Y. Hashimoto, and T. Ikoma, Solid State Communications
101, 1 (1997).
- "Control of band discontinuities at (100) GaAs/AlAs interfaces by ZnSe
insertion layers: Comparison with Si insertion layers";
T. Saito, Physical Review B 56, 14933 (1997).
- "Strain distribution and electronic structure of InAs quantum dots
on GaAs: Atomic scale calculations";
T. Saito, J. N. Schulman, and Y. Arakawa,
Physics of Low-Dimensional Structures 11/12, 19 (1997).
- "Atomic Scale Calculations for Strain Distribution and Electronic Structure
of InAs Pyramidal Quantum Dots on (100) GaAs";
T. Saito, J. N. Schulman, and Y. Arakawa,
Proc. of 24th Int. Symp. on Compound Semiconductors, San Diego, USA, 1997
(IEEE, 97TH8272, p.643).
- "Electronic structure of (311)-InAs monolayers embedded in GaAs";
T. Saito, Superlattices and Microstructures 23, 219 (1998).
- "Strain-energy distribution and electronic structure of InAs pyramidal
quantum dots with uncovered surfaces: Tight-binding analysis";
T. Saito, J. N. Schulman, and Y. Arakawa,
Physical Review B 57, 13016 (1998).
- "Atomic Structure and Strain in InGaN Alloy Calculated Using a
Valence-Force-Field Method";
T. Saito and Y. Arakawa,
Proc. of 2nd Int. Symp. on Blue Laser and Light Emitting Diodes,
Chiba, Japan, 1998 (Ohmsha, p.292).
- "Strain Energy Distribution in GaN and InGaN Quantum Dots on
AlN Buffer Layers: A Valence-force-field Approach";
T. Saito and Y. Arakawa,
Proc. of 25th Int. Symp. on Compound Semiconductors, Nara, Japan, 1998
(Inst. Phys. Conf. Ser. No.162, p.741).
- "Atomic structure and phase stability of InxGa1-xN
random alloys calculated using a valence-force-field method";
T. Saito and Y. Arakawa,
Physical Review B 60, 1701 (1999).
- "Formation of InGaN Quantum Dots: MOCVD Growth and Electronic
Structures";
T. Saito, T. Someya, K. Tachibana, S. Ishida, O. Moriwaki, and Y. Arakawa,
Proc. of 3rd SANKEN Int. Symp. on Advanced Nanoelectronics: Devices, Materials,
and Computing, Osaka, Japan, 2000 (Memoirs of The Institute of
Scientific and Industrial Research, Osaka University, Special Issue, Vol.57,
p.167).
- "Quantum confined electronic states in InGaN dots embedded in GaN:
Tight-binding calculation";
T. Saito and Y. Arakawa,
Proc. of 27th Int. Symp. on Compound Semiconductors, Monterey, California,
2000 (IEEE, 00TH8498, p.285).
- "Effects of internal piezoelectric field on electronic states of InGaN
quantum dots grown on GaN";
T. Saito and Y. Arakawa,
J. of Crystal Growth 237-239, 1172 (2002).
- "Quantum-Confined Stark Effect in InGaN Pyramidal Dots Induced by the
Piezoelectric Field";
T. Saito and Y. Arakawa,
Proc. of 28th Int. Symp. on Compound Semiconductors, Tokyo, Japan,
2001 (Inst. Phys. Conf. Ser. No. 170, p.555).
- "Electronic Structure of Piezoelectric In0.2Ga0.8N
Quantum Dots in GaN Calculated Using a Tight-Binding Method";
T. Saito and Y. Arakawa,
Physica E 15, 169 (2002).
- "Effect of strain variation on photoluminescence from InGaAs quantum dots
in air-bridge structures";
T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka,
Y. Yoshikuni, and Y. Arakawa,
Phys. Stat. Sol.(b) 238, 289 (2003).
- "Numerical analysis of transition energy shift in InAs/GaAs
quantum dots induced by strain-reducing layers";
T. Kakitsuka, T. Saito, T. Nakaoka, Y. Arakawa, H. Ebe, M. Sugawara, and
Y. Yoshikuni,
Phys. Stat. Sol.(c) 0, 1157 (2003).
- "Polarization field and electronic states of GaN pyramidal quantum dots in
AlN";
T. Saito and Y. Arakawa,
Phys. Stat. Sol.(c) 0, 1169 (2003).
- "Atomistic Calculation of Electronic States in III-V Nitride Quantum Dots"
;
T. Saito and Y. Arakawa,
Proc. of 3rd Int. Conf. on Numerical Simulation of Semiconductor Optoelectronic
Devices,Tokyo, Japan, 2003 (IEEE, 03EX726, pp.1-4).
- "Strain-induced modifications of the electronic states of InGaAs quantum
dots embedded in bowed airbridge structures";
T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka,
Y. Yoshikuni, and Y. Arakawa,
J. Appl. Phys. 94, 6812 (2003).
- "Transition Energy Control via Strain in Single Quantum Dots
Embedded in Micromachined Air-Bridge";
T. Nakaoka, T. Kakitsuka, T. Saito, and Y. Arakawa,
Jpn. J. Appl. Phys. 43, 4B, 2069 (2004).
- "Manipulation of electronic states in single quantum dots
by micromachined air-bridge";
T. Nakaoka, T. Kakitsuka, T. Saito, and Y. Arakawa,
Appl. Phys. Lett. 84, 1392 (2004).
- "Carrier relaxation in closely stacked InAs quantum dots";
T. Nakaoka, J. Tatebayashi, Y. Arakawa, and T. Saito,
J. Appl. Phys. 96, 150 (2004).
- "Size, shape, and strain dependence of the g factor in
self-assembled In(Ga)As quantum dots";
T. Nakaoka, T. Saito, J. Tatebayashi, and Y. Arakawa,
Physical Review B 70, 235337 (2004).
- "Strain Distribution and Electronic States in Stacked InAs/GaAs Quantum
Dots with Dot Spacing 0-6 nm";
T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, and Y. Arakawa,
Physica E 26, 217 (2005).
- "Tuning of g-factor in self-assembled In(Ga)As quantum dots through
strain engineering";
T. Nakaoka, T. Saito, J. Tatebayashi, S. Hirose, T. Usuki, N. Yokoyama, and
Y. Arakawa,
Physical Review B 71, 205301 (2005).
- "Optical polarization in columnar InAs/GaAs quantum dots:
8-band kp calculations";
T. Saito, H. Ebe, Y. Arakawa, T. Kakitsuka, and M. Sugawara,
Physical Review B 77, 195318 (2008).
- "Controlling Polarization in Quantum-dot Semiconductor Optical Amplifiers";
N. Yasuoka, H. Ebe, K. Kawaguchi, M. Ekawa, T. Kita, O. Wada, M. Sugawara,
T. Saito, and Y. Arakawa,
Memoirs of the Graduate School of Engineering Kobe University, No. 1, pp. 1-8,
2009.
- "Magnetic field dependence of exciton fine structures in InAs/GaAs quantum
dots: Exchange vs. Zeeman splittings";
T. Saito, T. Nakaoka, and Y. Arakawa,
Physica E 42, 2532 (2010).
- "Effect of electronic structure on single-photon emission in InAs/InP
quantum dot with quasi-resonant excitation";
T. Miyazawa, K. Takemoto, T. Nakaoka, T. Saito, S. Hirose, Y. Sakuma,
N. Yokoyama, and Y. Arakawa,
Physica Status Solidi (c) 8, 417 (2011).
- "Competing influence of an in-plane electric field on the Stark shifts
in a semiconductor quantum dot";
T. Nakaoka, Y. Tamura, T. Saito, T. Miyazawa, K. Watanabe, Y. Ota,
S. Iwamoto, and Y. Arakawa,
Applied Physics Letters 99, 181109 (2011).
- "Effect of lateral electric field on the transition energies of neutral
and charged excitons in In0.5Ga0.5As/GaAs quantum dots";
T. Saito, T. Nakaoka, and Y. Arakawa,
Physical Review B 91, 115306 (2015).
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Last update : 2015/3/13
Arakawa Lab., Institute of Industrial Science, University of Tokyo